A nonvolatile memory device made of a graphene nanoribbon and a multiferroic BiFeO3 gate dielectric layer

被引：45

作者：

Jung, I. ^{[2
]}

Son, J. Y. ^{[1
]}

机构：

[1] Kyung Hee Univ, Coll Appl Sci, Dept Appl Phys, Yongin 446701, South Korea

[2] Kyung Hee Univ, Dept Mech Engn, Yongin 446701, South Korea

来源：

CARBON | 2012年 / 50卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

TRANSPARENT CONDUCTORS; FILMS; OXIDE;

D O I：

10.1016/j.carbon.2012.04.027

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We demonstrate a field-effect nonvolatile random access memory (NVRAM) device made of a graphene nanoribbon (GNR) and a multiferroic epitaxial BiFeO3 thin film. The GNR and the source/drain electrodes were formed by position-controlled dip-pen nanolithography. The NVRAM device exhibited asymmetric hysteresis behavior originating from the combination of the p-type semiconducting behavior of the GNR and the ferroelectric hysteresis of the BiFeO3 layer. The memory window of the NVRAM device was significantly improved by a NH3 annealing process which changed the p-type GNR to n-type. (c) 2012 Elsevier Ltd. All rights reserved.

引用

页码：3854 / 3858

页数：5

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