The N3XT Approach to Energy-Efficient Abundant-Data Computing

被引:81
作者
Aly, Mohamed M. Sabry [1 ,2 ]
Wu, Tony F. [1 ]
Bartolo, Andrew [3 ]
Malviya, Yash H. [1 ]
Hwang, William [1 ]
Hills, Gage [1 ]
Markov, Igor [4 ]
Wootters, Mary [1 ,3 ]
Shulaker, Max M. [5 ]
Wong, H-S Philip [1 ]
Mitra, Subhasish [1 ,3 ]
机构
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[2] Nanyang Technol Univ, Sch Comp Sci & Engn, Singapore 639798, Singapore
[3] Stanford Univ, Dept Comp Sci, Stanford, CA 94305 USA
[4] Univ Michigan, Comp Sci & Engn Div, Ann Arbor, MI 48109 USA
[5] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
基金
美国国家科学基金会;
关键词
CNTFETs; energy efficiency; monolithic integrated circuits; nonvolatile memory; resistive ram; system-on-chip; 3-D integrated circuits; FLASH TRANSLATION LAYER; CARBON NANOTUBE FETS; VIRTUAL-SOURCE MODEL; INTEGRATED-CIRCUITS; COMPLEMENTARY TRANSISTORS; THERMAL-PROPERTIES; PERFORMANCE; MEMORY; DESIGN; COMPACT;
D O I
10.1109/JPROC.2018.2882603
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The world's appetite for analyzing massive amounts of structured and unstructured data has grown dramatically. The computational demands of these abundant-data applications, such as deep learning, far exceed the capabilities of today's computing systems and are unlikely to be met with isolated improvements in transistor or memory technologies, or integrated circuit architectures alone. To achieve unprecedented functionality, speed, and energy efficiency, one must create transformative nanosystems whose architectures are based on the salient properties of the underlying nanotechnologies. Our Nano-Engineered Computing Systems Technology (N3XT) approach makes such nanosystems posible through new computing system architectures leveraging emerging device (logic and memory) nanotechnologies and their dense 3-D integration with fine-grained connectivity to immerse computing in memory and new logic devices (such as carbon nanotube field-effect transistors for implementing high-speed and low-energy logic circuits) as well as high-density nonvolatile memory (such as resistive memory), and amenable to ultradense (monolithic) 3-D integration of thin layers of logic and memory devices that are fabricated at low temperature. In addition, we explore the use of several device and integration technologies in the N3XT beyond the specific ones mentioned earlier that are also used in our main nanosystem prototypes. We also present an efficient resiliency technique to overcome endurance challenges in certain resistive memory technologies. N3XT hardware prototypes demonstrate the practicality of our architectures. We evaluate the benefits of the N3XT using a simulation framework calibrated using experimental measurements. System-level energy-delay product of common implementations of abundant-data workloads improves by three orders of magnitude in the N3XT compared with conventional architectures. These improvements impact a broad range of application workloads and architecture configurations, from embedded systems to the cloud.
引用
收藏
页码:19 / 48
页数:30
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