Precision control of halo implantation for scaling-down ULSI manufacturing

被引：1

作者：

Wang, LL ^{[1
]}

Liu, JN ^{[1
]}

Guo, BN ^{[1
]}

Zhao, ZY ^{[1
]}

机构：

[1] Spans LLC, Austin, TX USA

来源：

ISSM 2005: IEEE INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING, CONFERENCE PROCEEDINGS | 2005年

关键词：

D O I：

10.1109/ISSM.2005.1513336

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work is a study on process control of halo implants of MOS transistors in the ULSI manufacturing. We present the electrical test data corresponding to halo implant changes on the NMOS and PMOS transistors of a high density, high performance flash memory device of 0.11 mu m technology node. Device threshold voltage is found to he sensitive to small variationsins of both implant and wafer orientation angles. It is observed that the PMOS device is more sensitive to angle changes than the NMOS device. A TCAD model is made to simulate the device characteristics and the device performance is correlated.

引用

页码：204 / 207

页数：4

共 50 条

[31] Impact of Stacking-Up and Scaling-Down Bit Cells in 3D NAND on Their Threshold Voltages
Lee, Dongwoo
Shin, Changhwan
MICROMACHINES, 2022, 13 (07)
[32] DESIGN AND SIMULATION OF A HIGH-RELIABILITY NONVOLATILE CMOS EEPROM MEMORY CELL COMPATIBLE WITH SCALING-DOWN TRENDS
ELHENNAWY, A
INTERNATIONAL JOURNAL OF ELECTRONICS, 1992, 72 (01) : 73 - 87
[33] THE IMPACT OF SCALING-DOWN OXIDE THICKNESS ON POLY-SI THIN-FILM TRANSISTORS IV CHARACTERISTICS
LIN, PS
LI, TS
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (04) : 138 - 139
[34] Manufacturing precision polysilicon resistors using ion implantation
Towner, Janet M.
Ion Implantation Technology, 2006, 866 : 590 - 593
[35] Scaling-down and interfacial effect to break down the trade-off between thermal stability and crystallization speed of the Sb2Se films
Wang, Tao
Lu, Yegang
Li, Yang
APPLIED PHYSICS LETTERS, 2020, 116 (14)
[36] A novel booster plate technology in high density NAND flash memories for voltage scaling-down and zero program disturbance
Cho, JD
Kim, DJ
Jang, DS
Kim, J
Kim, HS
Shin, WC
Ahn, ST
Kwon, OH
1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1996, : 238 - 239
[37] Multiplexing and scaling-down of nanostructured photon-triggered silicon field emitter arrays for maximum total electron yield
Dong, Chen D.
Swanwick, Michael E.
Keathley, Phillip D.
Kaertner, Franz X.
Velasquez-Garcia, Luis F.
NANOTECHNOLOGY, 2015, 26 (26)
[38] RBR control applied on chemical-mechanical polishing process in ULSI manufacturing
Li, Xiujuan
Jin, Zhuji
Kang, Renke
Guo, Dongming
Su, Jianxiu
Jingangshi yu Moliao Moju Gongcheng/Diamond and Abrasives Engineering, 2006, (02): : 61 - 64
[39] The kinase activity of EphA4 mediates homeostatic scaling-down of synaptic strength via activation of Cdk5
Peng, Yi-Rong
Hou, Zai-Hua
Yu, Xiang
NEUROPHARMACOLOGY, 2013, 65 : 232 - 243
[40] Characterization and simulation studies on high tilt ion implantation for precision halo implant applications
Guo, B. N.
Zhao, Z. Y.
Falk, S.
Liu, J.
Shim, K. H.
Jeong, U.
Mehta, S.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 261 (1-2): : 612 - 615

← 1 2 3 4 5 →