Transistor level synthesis for static CMOS combinational circuits

被引:6
作者
Liu, CPR [1 ]
Abraham, JA [1 ]
机构
[1] Univ Texas, Comp Engn Res Ctr, Austin, TX 78712 USA
来源
NINTH GREAT LAKES SYMPOSIUM ON VLSI, PROCEEDINGS | 1999年
关键词
D O I
10.1109/GLSV.1999.757403
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper introduces a novel framework to synthesize static CMOS circuits at the transistor level. A new class of binary decision diagrams (BDDs)which represent inverting Boolean functions, called Transistor Mapped BDDs (TM-BDDs), is used in the synthesis process. There is a one-to-one correspondence between a transistor netlist and its TM-BDD. Nodes in a TM-BDD represent gate inputs and the edges represent the transistors in the netlist. TM-BDDs can be optimized using BDD operations, and the data structure can retain device aspect ratios and geometries for performance optimization. The synthesis process involves a transformation from logic functions to transistor netlists using TM-BDDs. We show how a transistor netlist can be automatically generated during a depth-first traversal on a TM-BDD The synthesis process is nor only independent of any library, but also capable of generating a cell library for a particular circuit. Experimental results demonstrating the reduction of transistor counts are presented.
引用
收藏
页码:172 / 175
页数:4
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