Electrical and luminescent properties of CuGaSe2 crystals and thin films

被引：24

作者：

Rusu, M

Gashin, P

Simashkevich, A

机构：

[1] Moldavian Acad Sci, Inst Appl Phys, MD-2028 Kishinev, Moldova

[2] State Univ Moldova, Semicond Phys Dept, MD-2009 Kishinev, Moldova

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 70卷 / 02期

关键词：

CuGaSe2; thin films; single crystals;

D O I：

10.1016/S0927-0248(01)00023-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CuGaSe2 thin films with thicknesses of about 2 mum were prepared by flash and single source evaporation onto mica and (I I 0)-oriented ZnSe substrates in the substrate temperature range 150-450 degreesC. The obtained polycrystalline CuGaSe2 films had the chalcopyrite structure with the predominant growth direction [221]. Hall effect, conductivity and luminescence measurements have been carried out on CuGaSe2 thin films and source materials: CuGaSe2 single crystals grown by Bridgman technique and by chemical vapour transport using I-2 as transport agent. All films and crystals are p-type. Two acceptor levels with ionization energies E(A1)similar to 50-56meV and E(A2)similar to 130-150meV have been identified as due to Ga vacancy and presence of Se atoms on interstitial sites respectively. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：175 / 186

页数：12

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