This paper reports the development of a new stress-dependent chemical potential for solid state diffusion under multiple driving forces including mechanical stresses. The new stress-dependent chemical potential accounts for nonlinear, inelastic, and finite deformation. By using this stress-dependent chemical potential, insertion and extraction of lithium ions into a silicon particle is investigated. The distribution and evolution of diffusion-induced stress during the insertion/extraction processes are numerically calculated. Critical particle size is obtained as a function of the charging/discharging rates. It is also found that when plastic deformation occurs, the hoop stresses on the particle surface, contrary to intuition, can become positive even during the charging process, which may explain some of the recent experimental observations. (C) 2012 Elsevier Ltd. All rights reserved.
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Univ Kentucky, Dept Chem & Mat Engn, Lexington, KY 40506 USA
Kentucky Argonne Battery Mfg R&D Ctr, Lexington, KY 40511 USAUniv Kentucky, Dept Chem & Mat Engn, Lexington, KY 40506 USA
Cheng, Yang-Tse
Verbrugge, Mark W.
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Gen Motors Res & Dev Ctr, Chem Sci & Mat Syst Lab, Warren, MI 48090 USAUniv Kentucky, Dept Chem & Mat Engn, Lexington, KY 40506 USA
机构:
Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Gao, Y. F.
Zhou, M.
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Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
机构:
Univ Kentucky, Dept Chem & Mat Engn, Lexington, KY 40506 USA
Kentucky Argonne Battery Mfg R&D Ctr, Lexington, KY 40511 USAUniv Kentucky, Dept Chem & Mat Engn, Lexington, KY 40506 USA
Cheng, Yang-Tse
Verbrugge, Mark W.
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h-index: 0
机构:
Gen Motors Res & Dev Ctr, Chem Sci & Mat Syst Lab, Warren, MI 48090 USAUniv Kentucky, Dept Chem & Mat Engn, Lexington, KY 40506 USA
机构:
Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Gao, Y. F.
Zhou, M.
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA