Epitaxial Lift-Off and Transfer of III-N Materials and Devices from SiC Substrates

In this paper, electrical characterization results of N-polar GaN high-electron-mobility transistors that have been released from a 6H-SiC wafer and manually transferred to a Si wafer using a novel epitaxial lift-off (ELO) technique are presented. This recently developed ELO method uses a thin sacrificial layer of Nb2N, a hexagonal epitaxial conductor with less than 1% lattice mismatch to 4H-and 6H-SiC, to serve as the template for III-N device heterostructure growth. Measured results of transferred devices indicate that electron transport properties and low power density electrical performance are nominally unchanged relative to values measured before release. This technique has several advantages over competing ELO techniques, such as the well-known smart cut method, including bonding-ready released material with atomically-smooth backsides (<= 0.5 nm rms), easy substrate reclaim with indefinite recycling potential, and a transfer process that can be performed after full front-side device processing and yield screening has been completed.