BiFeO3 (BFO) ceramics were prepared by conventional solid-state reaction method without quenching. The effect of the sintering condition on the phase evolution and the ferroelectric properties of these BFO ceramics were investigated. A pinched polarization - electric field (P-E) hysteresis loop was observed in the sample sintered at high temperature for a short period (820 degrees C for 1 hour) because the domain wall motion is restricted by a large number of ionic defects such as oxygen vacancies. The BFO sample sintered at low temperature for a long period (760 degrees C for 6 hours) displayed a well-saturated P-E hysteresis loop due to its low ionic defect density.
机构:
Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Kim, A. Young
;
Lee, Ye Ji
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Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Lee, Ye Ji
;
Kim, Jeong Seog
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Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Kim, Jeong Seog
;
Han, Seung Ho
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Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Han, Seung Ho
;
Kang, Hyung-Won
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Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Kang, Hyung-Won
;
Lee, Hyeung-Gyu
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Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
机构:
Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Kim, A. Young
;
Lee, Ye Ji
论文数: 0引用数: 0
h-index: 0
机构:
Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Lee, Ye Ji
;
Kim, Jeong Seog
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机构:
Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Kim, Jeong Seog
;
Han, Seung Ho
论文数: 0引用数: 0
h-index: 0
机构:
Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Han, Seung Ho
;
Kang, Hyung-Won
论文数: 0引用数: 0
h-index: 0
机构:
Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Kang, Hyung-Won
;
Lee, Hyeung-Gyu
论文数: 0引用数: 0
h-index: 0
机构:
Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea