High performance of full swing logic inverter using all n-types amorphous ZnSnO and SiZnSnO thin film transistors

被引：36

作者：

Han, Sangmin ^{[1
]}

Lee, Sang Yeol ^{[1
]}

机构：

[1] Cheongju Univ, Dept Semicond Engn, Cheongju 360764, Chungbuk, South Korea

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 21期

基金：

新加坡国家研究基金会;

关键词：

CHANNEL; CIRCUITS;

D O I：

10.1063/1.4921791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high performance inverter consisting of amorphous zinc-tin-oxide (a-ZTO) thin film transistor (TFT) with enhancement mode and amorphous silicon-zinc-tin-oxide (a-SZTO) TFT with depletion mode has been fabricated by using only n-type metal-oxide thin film transistors. The turn on voltages of ZTO and SZTO TFTs showed positive value of 1.17V and negative value of -5V, respectively. High voltage gain of about 25 has been obtained by using implemented inverter with good switching characteristics even with all n-type thin film transistors. (C) 2015 Author(s).

引用

页数：4

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