Chemical vapor deposition of boron- and nitrogen-containing graphene thin films

被引：22

作者：

Suzuki, Satoru ^{[1
]}

Hibino, Hiroki ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2012年 / 177卷 / 02期

关键词：

Graphene; h-BN; CVD; Polycrystalline Ni substrates; CARBON NANOTUBES; DOPED SINGLE; NITRIDE; SPECTRA; LAYERS;

D O I：

10.1016/j.mseb.2011.10.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron and nitrogen-incorporated graphene thin films were grown on polycrystalline Ni substrates by thermal chemical vapor deposition using separate boron- and nitrogen-containing feedstocks. Boron and nitrogen atoms were incorporated in the film in almost equal amounts and the total content reached similar to 28%. The film predominantly consisted of separate graphene and boron nitride domains. Carrier concentration in the graphene domains was estimated to be about 1 x 10(-3) e/atom (3.8 x 10(12) cm(-2)) from G band shift in Raman spectra. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：233 / 238

页数：6

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