Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

被引：19

作者：

Wu, Jingjin ^{[1
]}

Zhao, Yinchao ^{[1
]}

Zhao, Ce Zhou ^{[2
]}

Yang, Li ^{[3
]}

Lu, Qifeng ^{[1
]}

Zhang, Qian ^{[3
]}

Smith, Jeremy ^{[1
]}

Zhao, Yongming ^{[4
,5
]}

机构：

[1] Univ Liverpool, Dept Elect Engn & Elect, Liverpool L69 3GJ, Merseyside, England

[2] Xian Jiaotong Liverpool Univ, Dept Elect & Elect Engn, Suzhou 215123, Peoples R China

[3] Xian Jiaotong Liverpool Univ, Dept Chem, Suzhou 215123, Peoples R China

[4] Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

[5] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

MATERIALS | 2016年 / 9卷 / 08期

关键词：

Zr-doped ZnO; atomic layer deposition; rapid thermal annealing; red-shift; TEMPERATURE; GA;

D O I：

10.3390/ma9080695

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The 4 at. % zirconium-doped zinc oxide (ZnO: Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 degrees C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO: Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 degrees C and decreased between 350 and 850 degrees C, while creeping up again at 850 degrees C. UV-vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 degrees C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350-550 degrees C. The ZnO: Zr film-coated glass substrates show good optical and electrical performance up to 550 degrees C during superstrate thin film solar cell deposition.

引用

页数：10

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