Quantum transport in ultra-scaled double-gate MOSFETs: A Wigner function-based Monte Carlo approach

被引：23

作者：

Sverdlov, V

Gehring, A

Kosina, H

Selberherr, S

机构：

[1] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria

[2] AMD Saxony LLC & Co KG, D-01109 Dresden, Germany

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 09期

关键词：

device simulation; quantum transport; Wigner equation; double-gate MOSFET;

D O I：

10.1016/j.sse.2005.07.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Source-to-drain current including tunneling in deca-nanometer double-gate MOSFETs is studied using a Monte Carlo approach for the Wigner transport equation. This approach allows the effect of scattering to be included. The subband structure is calculated by means of post-processing results from the device simulator (MINIMOS)-NT, and the contribution of the lowest subband is determined by the quantum transport simulation. Intersubband coupling elements are explicitly calculated and proven to be small in double-gate MOSFETs. The simulation results clearly show an increasing tunneling component of the drain current with decreasing gate length. For long gate length the semi-classical result is recovered. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1510 / 1515

页数：6