Quantum transport in ultra-scaled double-gate MOSFETs: A Wigner function-based Monte Carlo approach

被引：23

作者：

Sverdlov, V

Gehring, A

Kosina, H

Selberherr, S

机构：

[1] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria

[2] AMD Saxony LLC & Co KG, D-01109 Dresden, Germany

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 09期

关键词：

device simulation; quantum transport; Wigner equation; double-gate MOSFET;

D O I：

10.1016/j.sse.2005.07.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Source-to-drain current including tunneling in deca-nanometer double-gate MOSFETs is studied using a Monte Carlo approach for the Wigner transport equation. This approach allows the effect of scattering to be included. The subband structure is calculated by means of post-processing results from the device simulator (MINIMOS)-NT, and the contribution of the lowest subband is determined by the quantum transport simulation. Intersubband coupling elements are explicitly calculated and proven to be small in double-gate MOSFETs. The simulation results clearly show an increasing tunneling component of the drain current with decreasing gate length. For long gate length the semi-classical result is recovered. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1510 / 1515

页数：6

共 21 条

[1] Wigner function-based simulation of quantum transport in scaled DG-MOSFETs using a Monte Carlo method
Gehring A.
Kosina H.
Journal of Computational Electronics, 2005, 4 (1-2) : 67 - 70
[2] Monte Carlo simulations of double-gate MOSFETs
Kathawala, GA
Winstead, B
Ravaioli, U
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) : 2467 - 2473
[3] Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation
Gulzar A. Kathawala
Mohamed Mohamed
Umberto Ravaioli
Journal of Computational Electronics, 2003, 2 : 85 - 89
[4] Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation
Kathawala, Gulzar A.
Mohamed, Mohamed
Ravaioli, Umberto
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2003, 2 (2-4) : 85 - 89
[5] Impact of indium mole fraction on the quantum transport of ultra-scaled InxGa1–xAs double-gate Schottky MOSFET: tight-binding approach
Zahra Ahangari
Applied Physics A, 2016, 122
[6] Multiband simulation of quantum transport in nanoscale double-gate MOSFETs
Iwata, Hideyuki
Matsuda, Toshihiro
Ohzone, Takashi
SOLID-STATE ELECTRONICS, 2009, 53 (10) : 1130 - 1134
[7] Quantum electron transport modeling in double-gate MOSFETs based on multiband non-equilibrium Green's function method
Fitriawan, Helmy
Ogawa, Matsuto
Souma, Satofumi
Miyoshi, Tanroku
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 40 (02) : 245 - 248
[8] nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs
Ren, ZB
Venugopal, R
Goasguen, S
Datta, S
Lundstrom, MS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (09) : 1914 - 1925
[9] Effect of uncertainty principle on the Wigner function-based simulation of quantum transport
Kim, Kyoung-Youm
Kim, Saehwa
SOLID-STATE ELECTRONICS, 2015, 111 : 22 - 26
[10] A new approach for numerical simulation of quantum transport in double-gate SOI
Abdolkader, Tarek M.
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2007, 20 (06) : 299 - 309

← 1 2 3 →