A Critical Examination of 'Quasi-Static Negative Capacitance' (QSNC) theory

被引：0
作者：
Liu, Z. [1 ]
Bhuiyan, M. A. [1 ]
Ma, T. P. [1 ]
机构：
[1] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA
来源：
2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2018年
基金：
美国国家科学基金会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent years have seen a boom in the interest of using the alleged ferroelectric 'negative capacitance' to realize low subthreshold swing of MOSFETs. According to the "quasi-static negative capacitance' (QSNC) theory, a ferroelectric (FE) capacitor has an intrinsic but unstable 'negative capacitance' (NC) region. By adding a matching linear dielectric (DE) capacitor in series, it is possible to 'stabilize' the NC region. In this work, we examined the validity of the QSNC theory, and performed several key experiments to verify that experimental results are consistent with our theoretical assessment. Unfortunately, our overall results do not support the QSNC theory.
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页数：4
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