25-W CW high-brightness tapered semiconductor laser-array

被引：16

作者：

Mikulla, M ^{[1
]}

Schmitt, A ^{[1
]}

Walther, M ^{[1
]}

Kiefer, R ^{[1
]}

Pletschen, W ^{[1
]}

Braunstein, J ^{[1
]}

Weimann, G ^{[1
]}

机构：

[1] Fraunhofer Inst Angew Festkorperphys, D-79108 Freiburg, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 04期

关键词：

beam filamentation; beam quality; high-brightness high-power semiconductor laser-arrays; low-modal gain;

D O I：

10.1109/68.752532

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power high-brightness laser diode arrays comprising 25 tapered laser oscillators have been fabricated. The devices, based on recently developed low-modal gain epitaxial layer-structures, deliver a maximum output power of more than 25-W continuous-wave. A high beam quality uniformity is achieved with an average beam quality factor of M-2 = 2.6 for each individual emitter. Compared to conventional broad-area laser diode arrays the brightness of each emitter is improved by more than an order of magnitude in the slow-axis direction. These arrays have the potential to produce optical power densities as high as 1 MW/cm(2).

引用

页码：412 / 414

页数：3