Development of UV image intensifier tube with GaN photocathode

被引：18

作者：

Mizuno, I. ^{[1
]}

Nihashi, T. ^{[1
]}

Nagai, T. ^{[2
]}

Niigaki, M. ^{[1
]}

Shimizu, Y. ^{[1
]}

Shimano, K. ^{[1
]}

Katoh, K. ^{[1
]}

Ihara, T. ^{[1
]}

Okano, K. ^{[1
]}

Matsumoto, M. ^{[1
]}

Tachino, M. ^{[1
]}

机构：

[1] Hamamatsu Photon KK, Electron Tube Div, 314-5 Shimokanzo, Morioka, Iwate 4380193, Japan

[2] Hamamatsu Photon KK, Cent Res Lab, Hamakita Ku, Hamamatsu, Shizuoka 4348601, Japan

来源：

OPTICS AND PHOTONICS IN GLOBAL HOMELAND SECURITY IV | 2008年 / 6945卷

关键词：

UV; photocathode; GaN; high quantum efficiency; UV imaging; image intensifier;

D O I：

10.1117/12.778539

中图分类号：

TP7 [遥感技术];

学科分类号：

081102 ; 0816 ; 081602 ; 083002 ; 1404 ;

摘要：

We developed an UV image intensifier tube with a GaN photocathode in semi-transparent mode. In UV spectroscopy and low-light-level UV-imaging applications, there are strong demands for improved detectors which have higher quantum efficiency, low dark current, sharper wavelength cut-off response, and stable and robust characteristics. III-Nitrides semiconductor is one of the promising candidate materials to meet these demands. We developed a GaN photocathode which is epitaxially grown by MOCVD method. It has flat and high quantum efficiency from 200 nm to 360 nm. The cathode is incorporated into an image intensifier tube, which shows good gating performance and fine imaging resolution. With these improved performances, the UV image intensifier tube with GaN photocathode will expand its application fields to include UV spectroscopy and UV-imaging in low light.

引用

页数：11

共 6 条

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