AlGaN films grown by chloride-hydride chemical vapour deposition (CH CVD)

被引：0

作者：

Tsaregorodtsev, AM ^{[1
]}

Efimov, AN ^{[1
]}

Pikhtin, AN ^{[1
]}

Pichugin, IG ^{[1
]}

机构：

[1] STATE ELECTROTECH UNIV, ST PETERSBURG 197376, RUSSIA

来源：

COMPOUND SEMICONDUCTORS 1996 | 1997年 / 155期

关键词：

ALXGA1-XN; PARAMETERS; SAPPHIRE; LAYERS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial AlxGa1-xN films over all compositional range (0 less than or equal to x less than or equal to 1) have been grown by CH CVD in Al-Ga-HCl-NH3 reaction system. Alloy composition was reproducibly controlled by the variation of chloride concentration ratio (AlCl3 to GaCl) in gas phase. The precision measurements of lattice parameters were performed. Both parameters a and c tend to be higher than the values predicted by Vegard's law. The epitaxial orientation relationships for films grown on sapphire with different orientations are determined. From analysis of absorption spectra the alloy compositional dependence of band gap was determined as following: E-g(eV)=3.491 + 2.779x - 0.35x(1 - x).

引用

页码：243 / 246

页数：4

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