Dry oxidation behavior of epitaxial Si0.7Ge0.3 films

被引：1

作者：

Kang, HB ^{[1
]}

Choi, JK ^{[1
]}

Lee, JW ^{[1
]}

Yang, CW ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Dept Adv Mat Eng, Suwon 440746, South Korea

来源：

DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2 | 2004年 / 449-4卷

关键词：

Si1-xGex; oxidation; TEM; XPS;

D O I：

10.4028/www.scientific.net/MSF.449-452.361

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the oxidation behavior of epi- Si0.7Ge0.3 films in dry oxygen ambient. Epi- Si0.7Ge0.3 films about 500Angstrom in thickness were deposited on (100) Si wafers by UHV-CVD system. Oxidation was carried out in a conventional tube furnace at 800degreesC. In this study, it was found that Ge piles up at the oxide/substrate interface, forming a Ge-rich layer. Because of the large difference in the heat of formation between SiO2 (-730.4KJ/mol at 1000K) and GeO2 (-387.07 at 1000K) [1], the Si is to be more reactive than Ge to oxygen. The oxidation rate of SiGe in a dry oxygen environment is found to be essentially the same as that of pure Si.

引用

页码：361 / 364

页数：4