Dry oxidation behavior of epitaxial Si0.7Ge0.3 films

被引：1
作者：
Kang, HB [1 ]
Choi, JK [1 ]
Lee, JW [1 ]
Yang, CW [1 ]
机构：
[1] Sungkyunkwan Univ, Dept Adv Mat Eng, Suwon 440746, South Korea
来源：
DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2 | 2004年 / 449-4卷
关键词：
Si1-xGex; oxidation; TEM; XPS;
D O I：
10.4028/www.scientific.net/MSF.449-452.361
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have investigated the oxidation behavior of epi- Si0.7Ge0.3 films in dry oxygen ambient. Epi- Si0.7Ge0.3 films about 500Angstrom in thickness were deposited on (100) Si wafers by UHV-CVD system. Oxidation was carried out in a conventional tube furnace at 800degreesC. In this study, it was found that Ge piles up at the oxide/substrate interface, forming a Ge-rich layer. Because of the large difference in the heat of formation between SiO2 (-730.4KJ/mol at 1000K) and GeO2 (-387.07 at 1000K) [1], the Si is to be more reactive than Ge to oxygen. The oxidation rate of SiGe in a dry oxygen environment is found to be essentially the same as that of pure Si.
引用
收藏
页码：361 / 364
页数：4
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