Possible approach to fabricate p-type ZnO through the Be-N codoping method: First-principles calculations

被引:18
|
作者
Tang, Xin [1 ,2 ]
Deng, Yanzhen [3 ]
Wagner, Dustin [4 ]
Yu, Liang [2 ]
Lu, Haifeng [5 ]
机构
[1] Guilin Univ Technol, Key Lab New Proc Technol Nonferrous Met & Mat, Minist Educ, Guilin 541004, Peoples R China
[2] Guilin Univ Technol, Coll Mat Sci & Engn, Guilin 541004, Peoples R China
[3] Guilin Univ Elect Technol, Sch Foreign Studies, Guilin 541004, Peoples R China
[4] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
[5] Chinese Acad Sci, Comp Network Informat Ctrd, Beijing 10080, Peoples R China
基金
中国国家自然科学基金;
关键词
Semiconductors; Ab initio calculations; Electronic structure; FILMS; SEMICONDUCTORS; TRANSPARENT; ATOMS; GAN;
D O I
10.1016/j.ssc.2011.10.024
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
An ab initio calculation based on density functional theory is applied to study Be-N codoped ZnO and the possible complexes are discussed. The calculated results show that the substitutional N defect at the O site (N-O) easily binds with the interstitial Be (Be-i), rather than the substitutional Be defect at the Zn site (Be-Zn). This indicates that 4Be(Zn)-N-O complex is not a stable acceptor and is unlikely to form. Fortunately, Be-i-3N(O) is of high structural stability and its transition energy is very low due to the impurity band caused by the Be-i-2N(O) passive complex. Therefore, Be-i-3N(O) can serve as a stable source of p-type conductivity. In addition, it is also suggested that Be-N codoped p-type ZnO can be prepared under Zn-rich condition because Be-i-3N(O) has the lowest formation energy in this environment. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1 / 4
页数:4
相关论文
共 50 条
  • [1] First-principles study of p-type ZnO by Te-N codoping
    Yao Guang-Rui
    Fan Guang-Han
    Zheng Shu-Wen
    Ma Jia-Hong
    Chen Jun
    Zhang Yong
    Li Shu-Ti
    Su Shi-Chen
    Zhang Tao
    ACTA PHYSICA SINICA, 2012, 61 (17)
  • [2] First-principles calculation on p-type conduction of (Sb, N) codoping in ZnO
    Guo, Tingting
    Dong, Guobo
    Chen, Qiang
    Diao, Xungang
    Gao, Fangyuan
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2014, 75 (01) : 42 - 47
  • [3] First-principles study of p-type doping and codoping in ZnO
    Lee, EC
    Kim, YS
    Jin, YG
    Chang, KJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 : S23 - S26
  • [4] Pushing p-type conductivity in ZnO by (Zr, N) codoping: A first-principles study
    Duan, Xin-Ying
    Zhao, Yu-Jun
    Yao, Ruo-He
    SOLID STATE COMMUNICATIONS, 2008, 147 (5-6) : 194 - 197
  • [5] Realization of p-type ZnO by (nN, Mg) codoping from first-principles
    Chen, Lanli
    Xiong, Zhihua
    Wan, Qixin
    Li, Dongmei
    OPTICAL MATERIALS, 2010, 32 (09) : 1216 - 1222
  • [6] Realization of p-type conductivity in ZnO by (N, Ag) dual acceptor codoping: A first-principles study
    Xiong, Zhihua
    Chen, Lanli
    Wan, Qixin
    Li, Dongmei
    5TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR DETECTOR, IMAGER, DISPLAY, AND ENERGY CONVERSION TECHNOLOGY, 2010, 7658
  • [7] An effective and efficient approach to p-type A1N by Be2:O codoping from first-principles calculations
    Zhao, Meng
    Wang, Wenjun
    Wang, Jun
    Yang, Junwei
    Hu, Weijie
    Cuo, Liwei
    Chen, Xiaolong
    MODERN PHYSICS LETTERS B, 2016, 30 (20):
  • [8] Impact of Mg doping contents on the n-type and p-type ZnO by first-principles calculations
    Zhao Y.
    Ding W.
    Wang H.
    Dai Q.
    International Journal of Materials and Structural Integrity, 2018, 12 (1-3): : 194 - 207
  • [9] First-Principles Investigation on Ag, N Codoped in p-Type ZnO
    He, Cheng
    Zhang, Wenxue
    Duan, Li
    Li, Qingwei
    Shi, Zhongqi
    ECO-MATERIALS PROCESSING AND DESIGN XIII, 2012, 724 : 115 - +
  • [10] p-type in ZnO:N by codoping with Cr
    Kaminska, E
    Piotrowska, A
    Kossut, J
    Butkute, R
    Dobrowolski, W
    Golaszewska, K
    Barcz, A
    Jakiela, R
    Dynowska, E
    Przezdziecka, E
    Wawer, D
    FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES, 2004, 786 : 335 - 340