Parameters optimization of CIGS solar cell using 2D physical modeling

被引：52
作者：
Dabbabi, Samar [1 ]
Ben Nasr, Tarek [1 ]
Kamoun-Turki, Najoua [1 ]
机构：
[1] Univ Tunis EL Manar, Fac Sci Tunis, LPMC, Tunis 2092, Tunisia
来源：
RESULTS IN PHYSICS | 2017年 / 7卷
关键词：
CIGS solar cell; Electrical characteristics; Silvaco-Atlas software; HIGH-EFFICIENCY; SIMULATION; FILM; THICKNESS;
D O I：
10.1016/j.rinp.2017.06.057
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, the CIGS thin film solar cell has been investigated using the two-dimensional device simulator Silvaco-Atlas. Thickness and carrier concentration effects of the cell structure were studied to optimize the solar cell performances. Our results revealed high efficiency for a cell structure of 0.15 mm ZnO: Al, 0.06 mu m i-ZnO, 0.04 mu m CdS and 3 mu m CIGS. The carrier concentration effects of the different layers were also studied revealing a better performance for CIGS doping concentration of 10(-18) cm(-3). The optimized CIGS solar cell characteristics were a current density of short circuit J(sc) = 38.75 mA/cm(2), an opencircuit voltage V-0C = 804.03 mV, a fill factor FF = 74.48% and an efficiency eta = 23.20%. This result is in good agreement with experimental efficiencies found in literature. (C) 2017 Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license.
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收藏
页码：4020 / 4024
页数：5
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