Electronic properties of H and D doped ZnO epitaxial films

被引：21
作者：
Li, Y. J. [1 ]
Kaspar, T. C. [1 ]
Droubay, T. C. [1 ]
Zhu, Z. [1 ]
Shutthanandan, V. [1 ]
Nachimuthu, P. [1 ]
Chambers, S. A. [1 ]
机构：
[1] Pacific NW Natl Lab, Div Chem & Mat Sci, Richland, WA 99352 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2911723
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnO epitaxial films grown by pulsed laser deposition in an ambient of H-2 or D-2 exhibit qualitatively different electronic properties compared to films grown in vacuum or O-2 or bulk single crystals annealed in H-2. These include temperature-independent resistivities of similar to 0.1 Omega cm, carrier (electron) concentrations in the 10(18) cm(-3) range, mobilities of 20-40 cm(2)/V s, and negligible (a few meV) activation energies for conduction. These transport properties are consistent with H (D) forming an ultrashallow donor or conduction band states not achievable by postgrowth annealing in H-2. (C) 2008 American Institute of Physics.
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