Electronic properties of H and D doped ZnO epitaxial films

被引：21

作者：

Li, Y. J. ^{[1
]}

Kaspar, T. C. ^{[1
]}

Droubay, T. C. ^{[1
]}

Zhu, Z. ^{[1
]}

Shutthanandan, V. ^{[1
]}

Nachimuthu, P. ^{[1
]}

Chambers, S. A. ^{[1
]}

机构：

[1] Pacific NW Natl Lab, Div Chem & Mat Sci, Richland, WA 99352 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2911723

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO epitaxial films grown by pulsed laser deposition in an ambient of H-2 or D-2 exhibit qualitatively different electronic properties compared to films grown in vacuum or O-2 or bulk single crystals annealed in H-2. These include temperature-independent resistivities of similar to 0.1 Omega cm, carrier (electron) concentrations in the 10(18) cm(-3) range, mobilities of 20-40 cm(2)/V s, and negligible (a few meV) activation energies for conduction. These transport properties are consistent with H (D) forming an ultrashallow donor or conduction band states not achievable by postgrowth annealing in H-2. (C) 2008 American Institute of Physics.

引用

页数：3

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