Molecular-dynamics computer simulation of crystal growth and melting in Al50Ni50

被引:98
|
作者
Kerrache, A. [1 ]
Horbach, J. [1 ,2 ]
Binder, K. [1 ]
机构
[1] Johannes Gutenberg Univ Mainz, Inst Phys, D-55099 Mainz, Germany
[2] Deutsch Zentrum Luft & Raumfahrt DLR, Inst Mat Phys Weltraum, D-51170 Cologne, Germany
关键词
D O I
10.1209/0295-5075/81/58001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The melting and crystallization of Al50Ni50 are studied by means of molecular-dynamics computer simulations, using a potential of the embedded atom type to model the interactions between the particles. Systems in a slab geometry are simulated where the B2 phase of AlNi in the middle of an elongated simulation box is separated by two planar interfaces from the liquid phase, thereby considering the (100) crystal orientation. By determining the temperature dependence of the interface velocity, an accurate estimate of the melting temperature is provided. The value k = 0.0025 m/s/K for the kinetic growth coefficient is found. This value is about two orders of magnitude smaller than that found in recent simulation studies of one-component metals. The classical Wilson-Frenkel model is not able to describe the crystal growth kinetics on a quantitative level. We argue that this is due to the neglect of diffusion processes in the liquid-crystal interface. Copyright (C) EPLA, 2008.
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页数:6
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