Spatially resolved scanning tunneling spectroscopy of single-layer steps on Si(100) surfaces

Single-layer steps at Si(100) surfaces/interfaces present significant challenges to the quantitative characterization of buried dopant devices as well as the accurate imaging and relocation of fabricated quantum structures. We demonstrate the detailed spatially resolved scanning tunneling spectroscopy study across monolayer step edges on Si(100) surfaces and quantitative determination of the local density of state distributions and behavior of the band gap at step edges. The influence on the local electrostatic environment due to step edge states has been quantified while accounting for the effects of scanning tunneling measurement conditions. The dangling bond states on Si(100) surfaces are utilized as a fingerprint to quantify the local band bending landscape and to make corrections to the experimentally observed surface state energy levels and band gap values at the step edge regions. We observe a significant band gap narrowing behavior along a rebonded single-layer type B step edge on a degenerately boron-doped p-type Si substrate.