Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures

被引：10

作者：

Gan, Huadong ^{[1
]}

Ikeda, Shoji ^{[1
,2
]}

Yamanouchi, Michihiko ^{[1
]}

Miura, Katsuya ^{[1
,2
,3
]}

Mizunuma, Kotaro ^{[2
]}

Hayakawa, Jun ^{[3
]}

Matsukura, Fumihiro ^{[1
,2
]}

Ohno, Hideo ^{[1
,2
]}

机构：

[1] Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan

[3] Hitachi Ltd, Adv Res Lab, Tokyo 1858601, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2011年 / 47卷 / 06期

关键词：

MgO barrier; sputtering condition; tunnel magnetoresistance; ROOM-TEMPERATURE; TMR;

D O I：

10.1109/TMAG.2010.2104137

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated tunnel magnetoresistance (TMR) properties in double MgO-barrier magnetic tunnel junctions (DMTJs) with (Co25Fe75)(100-x)B-x free-layers with x = 15, 20, and 25 (in at.%) sputtered at different power. The TMR ratio of DMTJs increased with sputtering power, which is ascribed to the B composition reduction in the CoFeB free-layer with increasing sputtering power. The x-ray diffraction measurement showed that crystallization into (001)-oriented texture of CoFeB film sandwiched between the two MgO-layers as well as an improvement of (001) orientation of top MgO-barrier are realized. The TMR ratio over 200% was obtained in DMTJs with a (Co25Fe75)(85)B-15 free-layer sputtered at 0.88 and 1.77 W/cm(2)

引用

页码：1567 / 1570

页数：4

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