Perpendicular magnetization and exchange bias in epitaxial Cu/Ni/Fe50Mn50 thin films -: art. no. 024447

被引:6
作者
Xi, HW [1 ]
Ambrose, TF
Klemmer, TJ
van de Veerdonk, R
Howard, JK
White, RM
机构
[1] Seagate Technol, RHO, Bloomington, MN 55435 USA
[2] Seagate Res Ctr, Pittsburgh, PA 15222 USA
[3] Carnegie Mellon Univ, Data Storage Syst Ctr, Pittsburgh, PA 15213 USA
关键词
D O I
10.1103/PhysRevB.72.024447
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The perpendicular magnetic anisotropy has been achieved in epitaxial Cu/Ni thin films deposited by magnetron sputtering. A thin Fe50Mn50 layer deposited on top of the Ni layer induces perpendicular exchange bias arising from the interface exchange coupling. The hysteresis loops, the ferromagnetic thickness dependence, and the angular dependence of the exchange bias in as-deposited and field-cooled Cu/Ni/Fe50Mn50 trilayer thin films have been investigated. This study reveals many interesting features that are much different from those of in-plane exchange biased systems. It suggests distinct magnetization reversal behavior, domain nucleation, and domain wall motion of the Ni layer in the presence of interface coupling with Fe50Mn50, which deserves further study.
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页数:6
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