Fully depleted dual-gated thin-film SOI P-MOSFET's fabricated in SOI islands with an isolated buried polysilicon backgate

P-channel dual-gated thin-him silicon-on-insulator (DG-TFSOI) MOSFET's have been fabricated with an isolated buried polysilicon backgate in an SOI island formed by epitaxial lateral overgrowth (ELO) of silicon. This structure allows individual operation of both the top and back gates rather than the conventional common backgate structure, When fully-depdeted, the buried gate is used to individually shift the top gate threshold voltage (V-T) A linear shift of Delta V-T,V-top/Delta V-G,V-back of 0.5 V/V was achieved with a thin buried oxide, The effective density of interface traps (D-it) for the backgate polysilicon-oxide SOI interface were measured to be 1.8 x 10(11) #/cm(2) . eV as compared to the substrate-oxide of 1.1 x 10(11). cm(2) . eV.