In situ monitoring of electrical resistance of nanoferrite thin film irradiated by 190 MeV Au14+ ions

被引：18
作者：
Ghosh, S
Ayyub, P
Kumar, N
Khan, SA
Banerjee, D
机构：
[1] Univ Calcutta, Univ Coll Sci, Dept Phys, Kolkata 700009, W Bengal, India
[2] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India
[3] Solid State Phys Lab, Delhi 110054, India
[4] Ctr Nucl Sci, New Delhi 110067, India
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 212卷
关键词：
ferrite thin films; swift heavy ions; resistivity; oxygen loss measurement;
D O I：
10.1016/s0168-583X(03)01839-1
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A highly resistive nanocrystalline thin film of Li0.25Mg0.5Mn0.1Fe2.15O4, deposited by RF magnetron sputtering technique on Si(100) substrate, is irradiated with 190 MeV Au14+ ions. To probe the swift heavy ion induced modifications in the electrical properties in the film an in situ measurement of electrical resistance using two-probe method is carried out. We observe the value of resistivity comes down drastically from 1.5 x 10(8) to 1 x 10(5) Omega cm after irradiation at the fluence of 1 x 10(13) ions/cm(2). In XRD spectra after irradiation no previous spinel peaks are observed. No loss in oxygen content with fluence is observed. We have presented the observed phenomenon as an effect of formation of amorphized latent tracks on the basis of thermal spike model. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：510 / 515
页数：6
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