Electrochemical Fabrication of Silicon-Based Micro-Nano-Hybrid Porous Arrays for Hybrid-Lattice Photonic Crystal

被引:19
作者
Ge, Daohan [1 ,2 ]
Lu, Le [1 ]
Zhang, Jinhua [1 ]
Zhang, Liqiang [1 ,3 ]
Ding, Jianning [1 ,3 ]
Reece, Peter J. [4 ]
机构
[1] Jiangsu Univ, Micro Nano Sci & Technol Ctr, Sch Mech Engn, Zhenjiang 212013, Peoples R China
[2] Univ New South Wales, Sch Chem, Sydney, NSW 2052, Australia
[3] Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 213164, Peoples R China
[4] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia
基金
中国国家自然科学基金;
关键词
LAYER; MECHANISM; PHYSICS; REGIME;
D O I
10.1149/2.0361712jss
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Hybrid-lattice photonic crystals have received extensive attention in photonic device applications for their larger photonic band gaps. However, until now it is time-consuming and money-costing to realize large-area fabrication of hybrid photonic crystal structure at the nanoscale. This paper presents a flexible, effective and costless technique for the fabrication of 2D triangular-honeycomb hybrid-lattice photonic crystal with micro-nano-hybrid porous silicon structure based on the partly oxidized porous silicon (POPS) substrate. Self-positioned nanopore array surrounded with micro-sized macropores was achieved by photoelectrochemical etching on POPS substrate following several microelectrochemical system (MEMS) processing steps including chemical-mechanical polishing and KOH etching. A modified space-charge region (SCR) model was proposed to interpret the underlying mechanism of such self-positioned nanopores formation. Moreover, the dependency of the nanopore size on the morphology of the oxidized trenches with bottle-like widths was studied and a bottleneck effect was proposed. Our work suggests a new way of efficient realization of simple, effective and large-area fabrication of 2D hybrid photonic crystals, which is expected to foster the promotion in high performance photonic devices. (c) 2017 The Electrochemical Society. All rights reserved.
引用
收藏
页码:P893 / P897
页数:5
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