Grazing incidence small-angle x-ray scattering study of self-organized SiGe wires

被引：21
|
作者：
Holy, V [1 ]
Roch, T
Stangl, J
Daniel, A
Bauer, G
Metzger, TH
Zhu, YH
Brunner, K
Abstreiter, G
机构：
[1] Johannes Kepler Univ, Inst Halbleiterphys, A-4040 Linz, Austria
[2] European Synchrotron Radiat Facil, F-38042 Grenoble 9, France
[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Munich, Germany
[4] Masaryk Univ, Fac Sci, Dept Solid State Phys, CS-61137 Brno, Czech Republic
来源：
PHYSICAL REVIEW B | 2001年 / 63卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.63.205318
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structure of self-organized quantum wires buried at the interfaces of a SiGe/Si multilayer is investigated by grazing incidence small-angle x-ray scattering. A nearly periodic distribution of wires, well described by a short-range ordering model, gives rise to intensity satellite maxima in reciprocal space. The shape of the wire cross section is determined from the heights of these intensity maxima, and the analysis reveals that the conventional step-bunching model is not sufficient to explain the wire shape.
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页数：5
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