A new concept in fabricating building blocks for nanoelectronic and nanomechanic devices

被引:90
作者
Prinz, VY [1 ]
机构
[1] Inst Semicond Phys, Novosibirsk 630090, Russia
关键词
strained heterostructures; nanoshells; nanotubes;
D O I
10.1016/S0167-9317(03)00336-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This review outlines a new fabrication concept for three-dimensional (3D) nanoshells that can be obtained, in a self-formed manner, from several-monolayer (ML) thick semiconductor or metal thin-film planar structures. Fabrication of InGaAs/GaAs, SiGe/Si cylindrical micro- and nanoshells (tubes, spirals, and rings) is described. New results on the formation of periodic structures, open and closed single-crystal 3D nanoshells of various shapes with a minimum radius of curvature of similar to1 nm, and also on assembling these shells in more complex architectures are reported. Possible applications of structures obtained by the new technology are considered. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:466 / 475
页数:10
相关论文
共 33 条
[1]   Nanotubes from carbon [J].
Ajayan, PM .
CHEMICAL REVIEWS, 1999, 99 (07) :1787-1799
[2]  
AJAYAN PM, 2000, HDB NANOSTRUCTURED M, V1, P327
[3]   Mechanical and electrical properties of nanotubes [J].
Bernholc, J ;
Brenner, D ;
Nardelli, MB ;
Meunier, V ;
Roland, C .
ANNUAL REVIEW OF MATERIALS RESEARCH, 2002, 32 :347-+
[4]   Free-standing versus AlAs-embedded GaAs quantum dots, wires, and films: The emergence of a zero-confinement state [J].
Franceschetti, A ;
Zunger, A .
APPLIED PHYSICS LETTERS, 1996, 68 (24) :3455-3457
[5]   Fabrication of conducting GeSi/Si micro- and nanotubes and helical microcoils [J].
Golod, SV ;
Prinz, VY ;
Mashanov, VI ;
Gutakovsky, AK .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (03) :181-185
[6]   Stresses and strains in epilayers, stripes and quantum structures of III-V compound semiconductors [J].
Jain, SC ;
Willander, M ;
Maes, H .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (05) :641-671
[7]   Nanostructured materials [J].
Moriarty, P .
REPORTS ON PROGRESS IN PHYSICS, 2001, 64 (03) :297-381
[8]  
NASTAUSHEV YV, 2003, IN PRESS NANOTECHNOL
[9]   Charge-carrier separation in rolled heterostructures [J].
Osadchii, VM ;
Prinz, VY .
JETP LETTERS, 2000, 72 (06) :312-315
[10]  
Prinz A. V., 2002, Parent of the Russian Federation, No, Patent No. [2179458 RF, 2179458]