InAs quantum dots grown on InGaAs buffer layers by metal-organic chemical vapor deposition

被引：5

作者：

Sears, K ^{[1
]}

Wong-Leung, J ^{[1
]}

Tan, HH ^{[1
]}

Jagadish, C ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 281卷 / 2-4期

基金：

澳大利亚研究理事会;

关键词：

characterization; defects; nanostructures; metal-organic vapor phase epitaxy; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2005.04.043

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

TnAs quantum dots were deposited onto GaAs or onto a thin (nominally 7 ML) InxGa1-xAs layer (x = 0.075 or 0.15) by metal-organic chemical vapor deposition and compared using photoluminescence measurements, plan-view transmission electron microscopy (TEM) and atomic force microscopy (AFM). The photoluminescence intensity was considerably reduced for samples grown using an InGaAs buffer layer. This is correlated with the formation of dislocations (density = 1.5(+/- 1) x 10(8) cm(-2)) making them unsuitable for incorporation into devices requiring high optical efficiency. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：290 / 296

页数：7

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