Organic Thin-Film Memcapacitive Device With Analog and Nonvolatile Memory Effect

被引:9
作者
Li, Li-Xing [1 ]
Cai, Jia-Wei [1 ]
Zhong, Ya-Nan [1 ]
Gao, Xu [1 ]
Xu, Jian-Long [1 ]
Wang, Sui-Dong [1 ,2 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
[2] Macau Univ Sci & Technol, Macao Inst Mat Sci & Engn MIMSE, MUST SUDA Joint Res Ctr Adv Funct Mat, Taipa, Macao, Peoples R China
基金
中国国家自然科学基金;
关键词
Pentacene; Capacitance; Electrets; Polymers; Capacitance measurement; Nonvolatile memory; Electrodes; Memcapacitive device; organic thin film; pentacene; polymer electret;
D O I
10.1109/LED.2022.3195237
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An organic thin-film memcapacitive device, based on a partially covered organic semiconducting layer and a polymer electret charge trapping layer, is achieved. The device has a large number of capacitive states, with the effects of analog modulation upon writing and nonvolatile memory upon reading. A comprehensive physical model related to the tuning of the carrier accumulation threshold in the device is established to elaborate its memcapacitive characteristics. The memcapacitive device could be a good candidate as an organic thin-film electronic synapse with ultralow static power.
引用
收藏
页码:1539 / 1542
页数:4
相关论文
共 27 条
  • [1] Organic thin film memcapacitors
    Cai, Jia-Wei
    Li, Li-Xing
    Xu, Chao
    Feng, Yang
    Zhong, Ya-Nan
    Xu, Jian-Long
    Gao, Xu
    Wang, Sui-Dong
    [J]. APPLIED PHYSICS LETTERS, 2019, 114 (04)
  • [2] Charge accumulation dynamics in organic thin film transistors
    Chen, X. Y.
    Zhu, H.
    Wang, S. D.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (24)
  • [3] MEMRISTOR - MISSING CIRCUIT ELEMENT
    CHUA, LO
    [J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1971, CT18 (05): : 507 - +
  • [4] Energy-efficient memcapacitor devices for neuromorphic computing
    Demasius, Kai-Uwe
    Kirschen, Aron
    Parkin, Stuart
    [J]. NATURE ELECTRONICS, 2021, 4 (10) : 748 - 756
  • [5] Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors
    Di Ventra, Massimiliano
    Pershin, Yuriy V.
    Chua, Leon O.
    [J]. PROCEEDINGS OF THE IEEE, 2009, 97 (10) : 1717 - 1724
  • [6] Non-volatile low-power crossbar memcapacitor-based memory
    Emara, Ahmed A. M.
    Aboudina, Mohamed M.
    Fahmy, Hossam A. H.
    [J]. MICROELECTRONICS JOURNAL, 2017, 64 : 39 - 44
  • [7] INTERPRETATION OF CAPACITANCE-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    GREVE, DW
    HAY, VR
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1176 - 1180
  • [8] Multilevel Nonvolatile Memcapacitance in Graphene-Silk Fibroin Biocomposite Paper
    Guo, Xin
    Huang, Lei
    Zhou, Xinge
    Chang, Quanhong
    Cao, Changying
    Xiao, Guina
    Shi, Wangzhou
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2020, 30 (45)
  • [9] Admittance measurements on OFET channel and its modeling with R-C network
    Jung, Keum-Dong
    Lee, Cheon An
    Park, Dong-Wook
    Park, Byung-Gook
    Shin, Hyungcheol
    Lee, Jong Duk
    [J]. IEEE ELECTRON DEVICE LETTERS, 2007, 28 (03) : 204 - 206
  • [10] Evaluation of organic metal-oxide-semiconductor capacitors based on a distributed constant circuit
    Kimura, Yoshinari
    Hattori, Yoshiaki
    Kitamura, Masatoshi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (03)