Impact of Ge-Sb-Te compound engineering on the set operation performance in phase-change memories

被引：22

作者：

Boniardi, Mattia ^{[1
,2
]}

Ielmini, Daniele ^{[1
,2
]}

Tortorelli, Innocenzo ^{[4
]}

Redaelli, Andrea ^{[4
]}

Pirovano, Agostino ^{[4
]}

Allegra, Mario ^{[4
]}

Magistretti, Michele ^{[4
]}

Bresolin, Camillo ^{[4
]}

Erbetta, Davide ^{[4
]}

Modelli, Alberto ^{[4
]}

Varesi, Enrico ^{[4
]}

Pellizzer, Fabio ^{[4
]}

Lacaita, Andrea L. ^{[1
,2
,3
]}

Bez, Roberto ^{[4
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] Politecn Milan, IU NET, I-20133 Milan, Italy

[3] CNR, IFN, Sez Politecn Milano, I-20133 Milan, Italy

[4] Micron, Proc R&D, Agrate Brianza, Italy

来源：

SOLID-STATE ELECTRONICS | 2011年 / 58卷 / 01期

关键词：

Phase-change memory (PCM); Ge-Sb-Te ternary diagram; Chalcogenide material; Composition engineering; Set time performance; Crystallization kinetics; CRYSTALLIZATION; RESISTANCE; RETENTION; MEDIA; DRIFT;

D O I：

10.1016/j.sse.2010.11.033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The phase-change memory (PCM) technology is considered as one of the most attractive non-volatile memory concepts for next generation data storage. It relies on the ability of a chalcogenide material belonging to the Ge-Sb-Te compound system to reversibly change its phase between two stable states. namely the poly-crystalline low-resistive state and the amorphous high-resistive state, allowing the storage of the logical bit. A careful study of the phase-change material properties in terms of the set operation performance, the program window and the electrical switching parameters as a function of composition is very attractive in order to enlarge the possible PCM application spectrum. Concerning the set performance, a crystallization kinetics based interpretation of the observed behavior measured on different Ge-Sb-Te compounds is provided, allowing a physics-based comprehension of the reset-to-set transition. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：11 / 16

页数：6

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