Nickel oxide films by thermal annealing of ion-beam-sputtered Ni: Structure and electro-optical properties

被引:5
|
作者
Horak, P. [1 ]
Remes, Z. [2 ]
Bejsovec, V. [1 ]
Vacik, J. [1 ]
Danis, S. [3 ]
Kormunda, M. [4 ]
机构
[1] Acad Sci Czech Republ, Nucl Phys Inst, CZ-25068 Rez, Czech Republic
[2] Acad Sci Czech Republ, Inst Phys, Cukrovarnicka 10-112, CR-16200 Prague, Czech Republic
[3] Charles Univ Prague, Fac Math & Phys, Dept Condensed Matter Phys, Ke Karlovu 5, CR-12116 Prague, Czech Republic
[4] Jan Evangelista Purkyne Univ Usti Nad Labem, Dept Phys, Ceske Mladeze 8, Usti Nad Labem 40096, Czech Republic
关键词
NiO; Ion beam sputtering; Thermal annealing; Nuclear analytical methods; Optical properties; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; THIN-FILMS; OPTICAL-PROPERTIES; ELECTRICAL-PROPERTIES; SPRAY-PYROLYSIS; GAS-DETECTION; DEPOSITION; SPECTRA; METAL; HFO2;
D O I
10.1016/j.tsf.2017.08.047
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nickel oxide films were prepared by thermal annealing of Ni deposited by ion beam sputtering on Si (or glass) substrates. The annealing was carried out in a laboratory furnace open to air at temperatures 350 degrees C-500 degrees C with annealing time 1-7 h (1-h step). For as-deposited Ni films the sheet resistance R-S was found to be 8.39 Omega/square and no significant XRD diffraction peaks were observed. The thermal annealing resulted in significant changes in composition and electrical, structural and optical properties. The oxidation process led to a rapid growth of R-S up to 10(9)Omega/square, appearance of the optical absorption edge for oxidized Ni, and the formation of a polycrystalline NiO structure with the main NiO (111) diffraction peak. At 350 degrees C the annealing yielded 3-stage behavior of the sheet resistance due to limited oxidation during short time annealing. Longer processing times (>3 h) were necessary to successfully oxidize the deposited Ni film, after 1 h annealing the oxygen content (analyzed by nuclear resonance analysis) showed a significantly lower concentration within the depth of a sample; more uniform composition was found after prolonged annealing. XPS analysis showed the formation of a significant amount of nickel hydroxide at the surface. It was confirmed by ERDA. The optical properties were studied by Photothermal Deflection Spectroscopy (PDS). The data correlate with the 3-stage behavior of sheet resistance at 350 degrees C, suggesting lower oxidation during short-term annealing, while transparent nickel oxide films were formed during longer annealing and at higher temperatures. Based on analysis of the obtained experimental data (from measurement of the sheet resistance, XRD diffraction and optical absorption spectra), the temperature of 400 degrees C was found to be optimal for the formation of the fully oxidized NiO films. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:52 / 59
页数:8
相关论文
共 50 条
  • [21] Preparation and Performance of Nickel Oxide Films by Ion Beam Sputtering Deposition and Oxidation Annealing
    Peng, Jing
    Xu, Zhimou
    Wang, Shuangbao
    Jie, Quanlin
    Chen, Cunhua
    SENSORS AND MATERIALS, 2010, 22 (08) : 409 - 416
  • [22] Thermal annealing effects on the optical and electrical properties of a-SiC: H thin films sputtered at different hydrogen flow rates
    Magafas, L.
    Mertzanidis, C.
    Bandekas, D.
    Athanasiades, N.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2007, 9 (07): : 2030 - 2035
  • [23] Effect of annealing on structural, optical and electrical properties of nickel oxide thin films synthesized by the reactive radio frequency sputtering
    Elmassi, S.
    Narjis, A.
    Nkhaili, L.
    Elkissani, A.
    Amiri, L.
    Drissi, S.
    Abali, A.
    Bousseta, M.
    Outzourhit, A.
    PHYSICA B-CONDENSED MATTER, 2022, 639
  • [24] Effects of Vacuum Annealing and Oxygen Ion Beam Bombarding on the Electrical and Optical Properties of ITO Films Deposited by E-beam Evaporation
    Pan Yongqiang
    Hang Lingxia
    6TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR SENSING, IMAGING, AND SOLAR ENERGY, 2012, 8419
  • [25] Effect of RF power on Structure and Optical Properties of RF sputtered Copper Oxide Thin Films
    Kaur, Jasmeet
    Saipriya, S.
    Singh, R.
    PROCEEDINGS OF THE 59TH DAE SOLID STATE PHYSICS SYMPOSIUM 2014 (SOLID STATE PHYSICS), 2015, 1665
  • [26] Annealing temperature influence on electrical properties of ion beam sputtered Bi2Te3 thin films
    Zheng, Zhuang-hao
    Fan, Ping
    Liang, Guang-xing
    Zhang, Dong-ping
    Cai, Xing-min
    Chen, Tian-bao
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2010, 71 (12) : 1713 - 1716
  • [27] INFLUENCE OF THERMAL ANNEALING ON THE STRUCTURE AND OPTICAL PROPERTIES OF THIN ALUMINUM NITRIDE FILMS ON SAPPHIRE
    Devitsky, O., V
    Kravtsov, A. A.
    Pashchenko, A. S.
    Sysoev, I. A.
    PHYSICAL AND CHEMICAL ASPECTS OF THE STUDY OF CLUSTERS NANOSTRUCTURES AND NANOMATERIALS, 2020, (12) : 591 - 600
  • [28] Effects of Thermal Annealing on Structural and Optical Properties of Sputtered CdS Thin Films for Photovoltaic Application
    Islam, M. A.
    Hossain, M. S.
    Aliyu, M. M.
    Husna, J.
    Karim, M. R.
    Sopian, K.
    Amin, N.
    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012,
  • [29] Effects of thermal annealing on ion beam sputtered SiO2 and TiO2 optical thin films
    Tilsch, M
    Scheuer, V
    Tschudi, T
    OPTICAL THIN FILMS V: NEW DEVELOPMENTS, 1997, 3133 : 163 - 175
  • [30] The influence of annealing temperature on the structure and optical properties of silicon films deposited by electron beam evaporation
    Liu Bao-Jian
    Duan Wei-Bo
    Li Da-Qi
    Yu De-Ming
    Chen Gang
    Liu Ding-Quan
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2020, 39 (01) : 1 - 5