Local electrical stress-induced doping and formation of monolayer graphene P-N junction

被引：15

作者：

Yu, Tianhua ^{[1
]}

Liang, Chen-Wei ^{[1
]}

Kim, Changdong ^{[1
]}

Yu, Bin ^{[1
]}

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 24期

基金：

美国国家科学基金会;

关键词：

LAYER GRAPHENE;

D O I：

10.1063/1.3593131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated doping in monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as the electrical stressing level (voltage) increases. Two major physical mechanisms are proposed to interpret the observed phenomena: modifications of surface chemistry for N-type doping (at low-level stressing) and thermally-activated charge transfer from graphene to SiO2 substrate for P-type doping (at high-level stressing). The formation of P-N junction on two-dimensional graphene monolayer is demonstrated with complementary doping based on locally applied electrical stressing. (C) 2011 American Institute of Physics. [doi:10.1063/1.3593131]

引用

页数：3

共 18 条

[11] Tuning the Fermi Level of SiO2-Supported Single-Layer Graphene by Thermal Annealing [J].

Nourbakhsh, A. ;

Cantoro, M. ;

Klekachev, A. ;

Clemente, F. ;

Soree, B. ;

van der Veen, M. H. ;

Vosch, T. ;

Stesmans, A. ;

Sels, B. ;

De Gendt, S. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (15) :6894-6900

[12] Two-dimensional gas of massless Dirac fermions in graphene [J].

Novoselov, KS ;

Geim, AK ;

Morozov, SV ;

Jiang, D ;

Katsnelson, MI ;

Grigorieva, IV ;

Dubonos, SV ;

Firsov, AA .

NATURE, 2005, 438 (7065) :197-200

[13] Electric field effect in atomically thin carbon films [J].

Novoselov, KS ;

Geim, AK ;

Morozov, SV ;

Jiang, D ;

Zhang, Y ;

Dubonos, SV ;

Grigorieva, IV ;

Firsov, AA .

SCIENCE, 2004, 306 (5696) :666-669

[14] Mechanisms of doping graphene [J].

Pinto, H. ;

Jones, R. ;

Goss, J. P. ;

Briddon, P. R. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (09) :2131-2136

[15] n-Type Behavior of Graphene Supported on Si/SiO2 Substrates [J].

Romero, Hugo E. ;

Shen, Ning ;

Joshi, Prasoon ;

Gutierrez, Humberto R. ;

Tadigadapa, Srinivas A. ;

Sofo, Jorge O. ;

Eklund, Peter C. .

ACS NANO, 2008, 2 (10) :2037-2044

[16] Role of gate oxide thickness in controlling short channel effects in polycrystalline silicon thin film transistors [J].

Valletta, A. ;

Gaucci, P. ;

Mariucci, L. ;

Pecora, A. ;

Cuscuna, M. ;

Maiolo, L. ;

Fortunato, G. ;

Brotherton, S. D. .

APPLIED PHYSICS LETTERS, 2009, 95 (03)

[17] N-Doping of Graphene Through Electrothermal Reactions with Ammonia [J].

Wang, Xinran ;

Li, Xiaolin ;

Zhang, Li ;

Yoon, Youngki ;

Weber, Peter K. ;

Wang, Hailiang ;

Guo, Jing ;

Dai, Hongjie .

SCIENCE, 2009, 324 (5928) :768-771

[18] Bilayer Graphene System: Current-Induced Reliability Limit [J].

Yu, Tianhua ;

Lee, Eun-Kyu ;

Briggs, Benjamin ;

Nagabhirava, Bhaskar ;

Yu, Bin .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (10) :1155-1157

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