Local electrical stress-induced doping and formation of monolayer graphene P-N junction

被引：15

作者：

Yu, Tianhua ^{[1
]}

Liang, Chen-Wei ^{[1
]}

Kim, Changdong ^{[1
]}

Yu, Bin ^{[1
]}

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 24期

基金：

美国国家科学基金会;

关键词：

LAYER GRAPHENE;

D O I：

10.1063/1.3593131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated doping in monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as the electrical stressing level (voltage) increases. Two major physical mechanisms are proposed to interpret the observed phenomena: modifications of surface chemistry for N-type doping (at low-level stressing) and thermally-activated charge transfer from graphene to SiO2 substrate for P-type doping (at high-level stressing). The formation of P-N junction on two-dimensional graphene monolayer is demonstrated with complementary doping based on locally applied electrical stressing. (C) 2011 American Institute of Physics. [doi:10.1063/1.3593131]

引用

页数：3

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