Low and anisotropic barrier energy for adatom migration on a GaAs (110) surface studied by first-principles calculations

被引：26

作者：

Ishii, A ^{[1
]}

Aisaka, T

Oh, JW

Yoshita, M

Akiyama, H

机构：

[1] Tottori Univ, Dept Appl Math & Phys, Tottori 6808552, Japan

[2] JST, CREST, Chiba 2778581, Japan

[3] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 20期

关键词：

D O I：

10.1063/1.1627945

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We determined potential-energy surfaces for Ga and As adatoms on a GaAs (110) surface by first-principles calculations in order to understand the epitaxial growth mechanism. We found small migration barrier energies for Ga and As, which explain the long atom-migration length suggested by experiments. We also found that Ga migration is one dimensional and As migration is two dimensional, and that, for both Ga and As adatoms, the sites near As of the topmost layer are stable while those near Ga are unstable. (C) 2003 American Institute of Physics.

引用

页码：4187 / 4189

页数：3