Analytical modeling and sensitivity analysis of dielectric-modulated junctionless gate stack surrounding gate MOSFET (JLGSSRG) for application as biosensor

被引：59

作者：

Chakraborty, Avik ^{[1
]}

Sarkar, Angsuman ^{[2
]}

机构：

[1] Bengal Inst Technol & Management, ECE Dept, Bolpur, India

[2] Kalyani Govt Engn Coll, ECE Dept, Kalyani, W Bengal, India

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2017年 / 16卷 / 03期

关键词：

Biosensors; Junctionless; Surrounding gate MOSFET; Channel-center potential; Analytical model; Threshold voltage; FIELD-EFFECT-TRANSISTOR; THRESHOLD VOLTAGE MODEL; LABEL-FREE DETECTION; ELECTRICAL DETECTION; TUNNEL-FET; HIGH-K; NANOGAP; TECHNOLOGY; CHARGE;

D O I：

10.1007/s10825-017-0999-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical model of dielectric-modulated junctionless gate-stack surrounding gate MOSFET for application as a biosensor is presented. An expression for the channel-center potential is obtained by solving the 2-D Poisson's equation using a parabolic-potential approach. An analytical model for the threshold voltage is developed from the minimum channel-center potential to analyze the sensitivity of the biosensor. Moreover, the effects of the variation of the different device dimensional parameters on the sensitivity of the biosensor were investigated in order to study the dielectric modulation effects due to the permittivity changes by the biomolecules present within the nanogap cavity. The analytical model is verified and validated with the help of TCAD device simulations.

引用

页码：556 / 567

页数：12

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