The Unprecedented Highest-Layer-Number Ferroelectric Semiconductor of 2D Homologous Single-Phase Perovskites Tailored by Regulating Thickness of Inorganic Frameworks

被引：25
作者：
Guo, Wuqian [1 ,2 ]
Xu, Haojie [1 ,2 ]
Ma, Yu [1 ,2 ]
Liu, Yi [1 ,2 ]
Wang, Beibei [1 ]
Tang, Liwei [1 ]
Hua, Lina [1 ]
Luo, Junhua [1 ]
Sun, Zhihua [1 ]
机构：
[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
ADVANCED FUNCTIONAL MATERIALS | 2022年 / 32卷 / 44期
基金：
中国国家自然科学基金;
关键词：
ferroelectric semiconductors; highest-layer-number; regulating thickness; self-powered photoactivities;
D O I：
10.1002/adfm.202207854
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Ferroelectric semiconductors represent an exciting branch of new-generation optoelectronic devices. However, regarding severe polarization deterioration caused by leakage current, it is challenging to couple ferroelectricity and semiconductive properties in a single-phase material. The first quadrilayered ferroelectric semiconductor of 2D homologous perovskites, IA(2)Cs(3)Pb(4)Br(13) (IA = isoamylammonium), showing distinctive ferroelectric characteristics of symmetry breaking at 351 K and large polarization of 4.2 mu C cm(-2) is presented here. The design strategy of increasing layer-number endows higher Curie temperature and superior semiconductor merits than other lower-layered members (IA(2)Cs(n-1)Pb(n)Br(3n+1), n = 1-3). Bulk photovoltaic effects in IA(2)Cs(3)Pb(4)Br(13) result in a notable dichroism up to approximate to 1.2 for self-driven polarized-light detection. This unprecedented work opens an avenue toward the targeted performance optimization of electric-ordered functional materials.
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页数：7
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