The Unprecedented Highest-Layer-Number Ferroelectric Semiconductor of 2D Homologous Single-Phase Perovskites Tailored by Regulating Thickness of Inorganic Frameworks

被引：27
作者：
Guo, Wuqian [1 ,2 ]
Xu, Haojie [1 ,2 ]
Ma, Yu [1 ,2 ]
Liu, Yi [1 ,2 ]
Wang, Beibei [1 ]
Tang, Liwei [1 ]
Hua, Lina [1 ]
Luo, Junhua [1 ]
Sun, Zhihua [1 ]
机构：
[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
ADVANCED FUNCTIONAL MATERIALS | 2022年 / 32卷 / 44期
基金：
中国国家自然科学基金;
关键词：
ferroelectric semiconductors; highest-layer-number; regulating thickness; self-powered photoactivities;
D O I：
10.1002/adfm.202207854
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Ferroelectric semiconductors represent an exciting branch of new-generation optoelectronic devices. However, regarding severe polarization deterioration caused by leakage current, it is challenging to couple ferroelectricity and semiconductive properties in a single-phase material. The first quadrilayered ferroelectric semiconductor of 2D homologous perovskites, IA(2)Cs(3)Pb(4)Br(13) (IA = isoamylammonium), showing distinctive ferroelectric characteristics of symmetry breaking at 351 K and large polarization of 4.2 mu C cm(-2) is presented here. The design strategy of increasing layer-number endows higher Curie temperature and superior semiconductor merits than other lower-layered members (IA(2)Cs(n-1)Pb(n)Br(3n+1), n = 1-3). Bulk photovoltaic effects in IA(2)Cs(3)Pb(4)Br(13) result in a notable dichroism up to approximate to 1.2 for self-driven polarized-light detection. This unprecedented work opens an avenue toward the targeted performance optimization of electric-ordered functional materials.
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页数：7
相关论文
共 37 条
[1]   POSSIBLE SPECIES OF FERROMAGNETIC, FERROELECTRIC, AND FERROELASTIC CRYSTALS [J].
AIZU, K .
PHYSICAL REVIEW B, 1970, 2 (03) :754-&
[2]   PEROVSKITE PHYSICS Extremely efficient internal exciton dissociation through edge states in layered 2D perovskites [J].
Blancon, J. -C. ;
Tsai, H. ;
Nie, W. ;
Stoumpos, C. C. ;
Pedesseau, L. ;
Katan, C. ;
Kepenekian, M. ;
Soe, C. M. M. ;
Appavoo, K. ;
Sfeir, M. Y. ;
Tretiak, S. ;
Ajayan, P. M. ;
Kanatzidis, M. G. ;
Even, J. ;
Crochet, J. J. ;
Mohite, A. D. .
SCIENCE, 2017, 355 (6331) :1288-1291
[3]   2D Homologous Perovskites as Light-Absorbing Materials for Solar Cell Applications [J].
Cao, Duyen H. ;
Stoumpos, Constantinos C. ;
Farha, Omar K. ;
Hupp, Joseph T. ;
Kanatzidis, Mercouri G. .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2015, 137 (24) :7843-7850
[4]   Artificial two-dimensional polar metal at room temperature [J].
Cao, Yanwei ;
Wang, Zhen ;
Park, Se Young ;
Yuan, Yakun ;
Liu, Xiaoran ;
Nikitin, Sergey M. ;
Akamatsu, Hirofumi ;
Kareev, M. ;
Middey, S. ;
Meyers, D. ;
Thompson, P. ;
Ryan, P. J. ;
Shafer, Padraic ;
N'Diaye, A. ;
Arenholz, E. ;
Gopalan, Venkatraman ;
Zhu, Yimei ;
Rabe, Karin M. ;
Chakhalian, J. .
NATURE COMMUNICATIONS, 2018, 9
[5]   Impact of Layer Thickness on the Charge Carrier and Spin Coherence Lifetime in Two-Dimensional Layered Perovskite Single Crystals [J].
Chen, Xihan ;
Lu, Haipeng ;
Li, Zhen ;
Zhai, Yaxin ;
Ndione, Paul F. ;
Berry, Joseph J. ;
Zhu, Kai ;
Yang, Ye ;
Beard, Matthew C. .
ACS ENERGY LETTERS, 2018, 3 (09) :2273-2279
[6]   High-Gain and Low-Driving-Voltage Photodetectors Based on Organolead Triiodide Perovskites [J].
Dong, Rui ;
Fang, Yanjun ;
Chae, Jungseok ;
Dai, Jun ;
Xiao, Zhengguo ;
Dong, Qingfeng ;
Yuan, Yongbo ;
Centrone, Andrea ;
Zeng, Xiao Cheng ;
Huang, Jinsong .
ADVANCED MATERIALS, 2015, 27 (11) :1912-+
[7]   Ferroelectric switching of a two-dimensional metal [J].
Fei, Zaiyao ;
Zhao, Wenjin ;
Palomaki, Tauno A. ;
Sun, Bosong ;
Miller, Moira K. ;
Zhao, Zhiying ;
Yan, Jiaqiang ;
Xu, Xiaodong ;
Cobden, David H. .
NATURE, 2018, 560 (7718) :336-+
[8]   Bulk photovoltaic effect in noncentrosymmetric crystals [J].
Fridkin, VM .
CRYSTALLOGRAPHY REPORTS, 2001, 46 (04) :654-658
[9]   HIGH-VOLTAGE BULK PHOTOVOLTAIC EFFECT AND THE PHOTOREFRACTIVE PROCESS IN LINBO3 [J].
GLASS, AM ;
LINDE, DVD ;
NEGRAN, TJ .
APPLIED PHYSICS LETTERS, 1974, 25 (04) :233-235
[10]   Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe [J].
Gong, Shi-Jing ;
Zheng, Fan ;
Rappe, Andrew M. .
PHYSICAL REVIEW LETTERS, 2018, 121 (01)
1234