Physical vapor transport of Bi2Te3 using elemental Bi and Te sources

被引：0
作者：
Concepcion, O. [1 ]
Vazquez, O. [1 ]
de Melo, O. [1 ]
Escobosa, A. [2 ]
机构：
[1] Univ La Habana, Fac Fis, Havana, Cuba
[2] CINVESTAV, SEES Ingn Elect, Mexico City, DF, Mexico
来源：
2015 IEEE INTERNATIONAL AUTUMN MEETING ON POWER, ELECTRONICS AND COMPUTING (ROPEC) | 2015年
关键词：
Topological insulator; Physical vapor transport; Bismuth telluride; TELLURIDE THIN-FILMS; TOPOLOGICAL INSULATOR; DEPOSITION; SURFACE;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A novel procedure to obtain micro and nanocrystals of Bi2Te3 is presented. The crystals are obtained by physical vapor transport using Bi and Te as sources. They were characterized by x-ray diffraction and scanning electron microscopy. Different kinds of structures as faceted crystals, strips and tubes were found at different temperatures. X-rays diffraction indicated that crystals were oriented with the (0 0 1) planes parallel to the surface.
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页数：3
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