Fabrication of Photovoltaic Devices Using ZnO Nanostructures and SnS Thin Films

被引：12

作者：

Reddy, N. Koteeswara ^{[1
,2
]}

Devika, M. ^{[3
]}

Gunasekhar, K. R. ^{[4
]}

Gopal, E. S. R. ^{[5
]}

机构：

[1] Indian Inst Sci, Ctr Nanosci & Engn, Bangalore 560012, Karnataka, India

[2] BML Munjal Univ Sidhrawali, Sch Engn & Technol, Dept Phys, Gurgaon 122413, India

[3] Indian Inst Sci, Dept Aerosp Engn, Bangalore 560012, Karnataka, India

[4] Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore 560012, Karnataka, India

[5] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

来源：

NANO | 2016年 / 11卷 / 07期

关键词：

SnS thin films; ZnO nanostructures; solar cell devices; photovoltaic properties; low-temperature synthesis; nontoxic materials; LITHIUM-ION BATTERIES; SINGLE-CRYSTALS; SOLAR-CELLS; ELECTROCHEMICAL PERFORMANCE; ELECTRICAL-PROPERTIES; PHYSICAL-PROPERTIES; GROWTH; HETEROJUNCTION; NANOCOMPOSITE; CONDUCTIVITY;

D O I：

10.1142/S1793292016500776

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The development of nontoxic and cost-effective solar cell devices is one of the challenging tasks even now. With this objective, solar cell devices using tin mono sulfide (SnS) thin films and zinc oxide (ZnO) nanostructures with a superstrate configuration of ITO/ZnO film/ZnO nanorods/SnS film/Zn have been fabricated and their photovoltaic properties have been investigated. Vertically aligned ZnO nanostructures were grown on indium doped tin oxide substrate by chemical solution method and then, SnS thin films were deposited by thermal evaporation method. A typical solar cell device exhibited significant light conversion efficiency with an open circuit voltage and short circuit current of 350mV and 5.14 mA, respectively.

引用

页数：7

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