Raman scattering diagnostics of as grown and pulsed laser modified Ge-Si nanostructures with quantum dots

被引：1

作者：

Gatskevich, E. I. ^{[1
]}

Ivlev, G. D. ^{[1
]}

Volodin, V. A. ^{[2
]}

Dvurechenskii, A. V. ^{[2
]}

Efremov, M. D. ^{[2
]}

Nikiforov, A. I. ^{[2
]}

Yakimov, A. I. ^{[2
]}

机构：

[1] Inst Elect NASB, 22 Logoiskii Trakt, Minsk 220090, BELARUS

[2] RAS, Inst Semicond Phys, SB, Novosibirsk 630090, Russia

来源：

ICONO 2007: NOVEL PHOTONICS MATERIALS; OPTICS AND OPTICAL DIAGNOSTICS OF NANOSTRUCTURES | 2007年 / 6728卷

关键词：

Raman spectra; Ge; Si; nanostructure; ruby laser; nanopulsed irradiation;

D O I：

10.1117/12.752381

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The investigation of nanosecond ruby laser impact on Ge/Si heterostructures with GexSi1-x quantum dots (QD's) has been carried out. Both energy density in pulse and number of pulses changed. Raman spectroscopy was used to study the nanocluster states before and after laser irradiation. The method for control of composition and strain in Ge-Si based quantum dots was essentially improved.

引用

页数：5