Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si

被引：47

作者：

Borg, Mattias ^{[1
]}

Schmid, Heinz ^{[1
]}

Moselund, Kirsten E. ^{[1
]}

Cutaia, Davide ^{[1
]}

Riel, Heike ^{[1
]}

机构：

[1] IBM Res Zurich, CH-8803 Ruschlikon, Switzerland

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 14期

关键词：

VAPOR-PHASE EPITAXY; TRIMETHYLINDIUM PYROLYSIS; COMPOUND SEMICONDUCTOR; GAAS NANOWIRES; AREA MOVPE; GROWTH; INTEGRATION; TRANSISTORS; SILICON; PLANAR;

D O I：

10.1063/1.4916984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide nanotube templates is studied as function of nanotube diameter (20-140 nm), growth time (0-30 min), growth temperature (520-580 degrees C), V/III ratio (40-160), nanotube spacing (300-2000 nm), and substrate crystal orientation. It is found that the effective V/III ratio is reduced at least by a factor of two within the nanotube templates compared to the outside, detectable by changes in the growth facet morphology. The reduced V/III ratio originates from the different transport mechanisms for the As and In precursor species; As and In species are both transported by Knudsen diffusion in the vapor, but an additional contribution of In surface diffusion reduces the V/III ratio. The results reveal the interplay of growth parameters, crystal facets and template geometry and thus are generally applicable for nanoscale selective epitaxy. (C) 2015 AIP Publishing LLC.

引用

页数：7

共 36 条

[31] Growth of highly uniform InAs nanowire arrays by selective-area MOVPE [J].