Influence of annealed ohmic contact metals on polarisation of AlGaN barrier layer

被引：12

作者：

Lin, ZJ ^{[1
]}

Lu, W

Lee, J

Liu, DM

Flynn, JS

Brandes, GR

机构：

[1] Ohio State Univ, Dept Elect Engn, Columbus, OH 43210 USA

[2] ATMI, Danbury, CT 06810 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 19期

关键词：

D O I：

10.1049/el:20030890

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of annealed ohmic contact metals on the polarisation of the AlGaN barrier layer has been investigated by the Schottky contacts on the AlGaN/GaN HFET structure. The analysed result shows that annealed ohmic contact metals weaken the polarisation of the AlGaN barrier layer. When ohmic contact metals are close to Schottky contact metals, the weakened polarisation decreases the 2DEG sheet carrier concentration in the channel.

引用

页码：1412 / 1414

页数：3

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