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Oxygen vacancies and V co-doped Co3O4 prepared by ion implantation boosts oxygen evolution catalysis*
被引:4
|作者:
Sun, Bo
[1
]
He, Dong
[1
]
Wang, Hongbo
[1
]
Liu, Jiangchao
[1
]
Ke, Zunjian
[1
]
Cheng, Li
[1
]
Xiao, Xiangheng
[1
]
机构:
[1] Wuhan Univ, Dept Phys, Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Peoples R China
基金:
中国国家自然科学基金;
中国博士后科学基金;
关键词:
ion implantation;
oxygen vacancy;
oxygen evolution reaction;
heteroatom doping;
WATER OXIDATION;
ELECTROCATALYSIS;
EFFICIENT;
D O I:
10.1088/1674-1056/ac1339
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
Introducing heteroatoms and defects is a significant strategy to improve oxygen evolution reaction (OER) performance of electrocatalysts. However, the synergistic interaction of the heteroatom and defect still needs further investigations. Herein, we demonstrated an oxygen vacancy-rich vanadium-doped Co3O4 (V-O-v-Co3O4), fabricated by V-ion implantation, could be used for high-efficient OER catalysis. X-ray photoelectron spectra (XPS) and density functional theory (DFT) calculations show that the charge density of Co atom increased, and the reaction barrier of reaction pathway from O* to HOO* decreased. V-O-v-Co3O4 catalyst shows a low overpotential of 329 mV to maintain current density of 10 mA.cm(-2), and a small Tafel slope of 74.5 mV.dec(-1). This modification provides us with valuable perception for future design of heteroatom-doped and defect-based electrocatalysts.
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页数:6
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