Oxygen vacancies and V co-doped Co3O4 prepared by ion implantation boosts oxygen evolution catalysis*

被引:4
作者
Sun, Bo [1 ]
He, Dong [1 ]
Wang, Hongbo [1 ]
Liu, Jiangchao [1 ]
Ke, Zunjian [1 ]
Cheng, Li [1 ]
Xiao, Xiangheng [1 ]
机构
[1] Wuhan Univ, Dept Phys, Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
ion implantation; oxygen vacancy; oxygen evolution reaction; heteroatom doping; WATER OXIDATION; EFFICIENT; ELECTROCATALYSIS;
D O I
10.1088/1674-1056/ac1339
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Introducing heteroatoms and defects is a significant strategy to improve oxygen evolution reaction (OER) performance of electrocatalysts. However, the synergistic interaction of the heteroatom and defect still needs further investigations. Herein, we demonstrated an oxygen vacancy-rich vanadium-doped Co3O4 (V-O-v-Co3O4), fabricated by V-ion implantation, could be used for high-efficient OER catalysis. X-ray photoelectron spectra (XPS) and density functional theory (DFT) calculations show that the charge density of Co atom increased, and the reaction barrier of reaction pathway from O* to HOO* decreased. V-O-v-Co3O4 catalyst shows a low overpotential of 329 mV to maintain current density of 10 mA.cm(-2), and a small Tafel slope of 74.5 mV.dec(-1). This modification provides us with valuable perception for future design of heteroatom-doped and defect-based electrocatalysts.
引用
收藏
页数:6
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