Experimental evidence for an electrically neutral (N-Si)-complex formed during the annealing process of Si+-/N+-co-implanted 4H-SiC

被引：2

作者：

Schmid, F ^{[1
]}

Frank, T ^{[1
]}

Pensl, G ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Phys Appl, DE-91058 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷

关键词：

ion implantation; nitrogen donors; donor deactivation;

D O I：

10.4028/www.scientific.net/MSF.483-485.641

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hall effect investigations taken on Si+-/N+-, C+-/N+- or Ne+-N+-co-implanted 4H-SiC layers and deep level transient spectroscopy investigations taken on Si+-implanted 4H-SiC layers provide experimental evidence for an electrically neutral defect complex formed during the annealing process at temperatures between 1400 degrees C and 1700 degrees C. This defect complex consumes nitrogen donors and an intrinsic Si containing defect species (interstitial Si or Si-antisite) or C-vacancies. At our present knowledge, we favor an (N-X-Si-Y)-complex.

引用

页码：641 / 644

页数：4

共 11 条

[1] Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers [J].

Åberg, D ;

Hallén, A ;

Pellegrino, P ;

Svensson, BG .

APPLIED PHYSICS LETTERS, 2001, 78 (19) :2908-2910

[2]

Dalibor T, 1996, INST PHYS CONF SER, V142, P517

[3]

Dalibor T, 1997, PHYS STATUS SOLIDI A, V162, P199, DOI 10.1002/1521-396X(199707)162:1<199::AID-PSSA199>3.0.CO

[4]

2-0

[5] Formation and annealing of nitrogen-related complexes in SiC [J].

Gerstmann, U ;

Rauls, E ;

Frauenheim, T ;

Overhof, H .

PHYSICAL REVIEW B, 2003, 67 (20)

[6] Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T [J].

Rutsch, G ;

Devaty, RP ;

Choyke, WJ ;

Langer, DW ;

Rowland, LB .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (04) :2062-2064

[7] Annealing process of N+-/P+-ions coimplanted along with Si+-, C+- or Ne+-ions into 4H-SiC -: Governed by formation of electrically neutral complexes or by site-competition-effect? [J].

Schmid, F ;

Pensl, G .

SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 :909-912

[8] Comparison of the electrical activation of P+ and N+ ions co-implanted along with Si+ or C+ ions into 4H-SiC [J].

Schmid, F ;

Pensl, G .

APPLIED PHYSICS LETTERS, 2004, 84 (16) :3064-3066

[9] Phosphorus-related donors in 6H-SiC generated by ion implantation [J].

Troffer, T ;

Peppermuller, C ;

Pensl, G ;

Rottner, K ;

Schoner, A .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (07) :3739-3743

[10]

Wellenhofer G, 1997, PHYS STATUS SOLIDI B, V202, P107, DOI 10.1002/1521-3951(199707)202:1<107::AID-PSSB107>3.0.CO

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