Technical method of improving overload of pressure sensitive chip based on sacrificial layer technology

被引:2
作者
Chuai, Rongyan [1 ]
Yang, Yuxin [1 ]
Li, Xin [1 ]
Wang, Jian [2 ]
Zhang, Bing [1 ]
机构
[1] Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang 110870, Liaoning, Peoples R China
[2] Shenyang Univ Chem Technol, Sch Informat & Engn, Shenyang 110142, Liaoning, Peoples R China
基金
中国国家自然科学基金;
关键词
Pressure sensor; Overload capacity; Fracture strength; Piezoresistor; YOUNGS MODULUS; FRACTURE STRENGTH; POLYSILICON; SENSOR;
D O I
10.1016/j.sna.2018.07.008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For pressure sensitive chips made by sacrificial layer technology, their overload capacity can be significantly improved through accurate control over the thickness of the sacrificial layer and the pressure sensitive diaphragm. Based on the analysis for the simulation of the stress distribution of the pressure sensitive structure, the relationship between sizes of the sensitive structure and the overload capacity is elaborated in virtue of the influence of sensitive structure sizes on fracture strength of the polysilicon sensitive diaphragm; and then a design method in improving overload capacity is proposed. Our simulation and analysis indicate that the overload can exceed thirty one-fold of the full scale pressure when properly reducing the thickness of the sacrificial layer and the diaphragm. A sample pressure sensor chip is fabricated with a full scale range of 2 MPa. The test results show that the overpressure of the sample is 18MPa, and its full scale output voltage is 288 mV under 5 V power supply. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码:593 / 600
页数:8
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