Interfacial investigation of in situ oxidation of 4H-SiC

被引：63
作者：
Virojanadara, C [1 ]
Johansson, LI [1 ]
机构：
[1] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
来源：
SURFACE SCIENCE | 2001年 / 472卷 / 1-2期
关键词：
semi-conductor-insulator interfaces; silicon carbide; oxidation; silicon oxides;
D O I：
10.1016/S0039-6028(00)00967-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
An in situ oxidation study of root3 x root3 R30 degrees reconstructed 4H-SiC(0001) surfaces is reported. An intermediate oxidation state (interpreted to be Si+1) is revealed in core level photoemission spectra recorded from the in situ prepared SiO2/4H-SiC samples. Oxidation was made at a pressure of similar to 10(-3) Torr in flowing oxygen and at substrate temperatures from 600 degreesC to 950 degreesC. The highest oxidation rate was obtained at 800 degreesC when approximate to 25 Angstrom thick SiO2 layers were prepared. The surface related C 1s components observed on the clean reconstructed 4H-SiC(0001) surfaces were found to disappear after oxidation. No carbon or carbon containing by-product at the interface or in the oxide were possible to observe for the films grown. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L145 / L149
页数：5
相关论文
共 50 条
  • [31] A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy
    Ferro, Gabriel
    Chaussende, Didier
    SCIENTIFIC REPORTS, 2017, 7
  • [32] Properties of Pt/4H-SiC Schottky diodes with interfacial layer at elevated temperatures
    Sochacki, M
    Kolendo, A
    Szmidt, J
    Werbowy, A
    SOLID-STATE ELECTRONICS, 2005, 49 (04) : 585 - 590
  • [33] Interfacial degradation analysis of 4H-SiC MOSFETs through Power Cycling Test
    Kim M.
    Yoo D.
    Lee H.-J.
    Transactions of the Korean Institute of Electrical Engineers, 2023, 72 (02) : 207 - 211
  • [34] Kinetic study of interfacial solid state reactions in the Ni/4H-SiC contact
    Zhang, Z.
    Teng, J.
    Yuan, W. X.
    Zhang, F. F.
    Chen, G. H.
    APPLIED SURFACE SCIENCE, 2009, 255 (15) : 6939 - 6944
  • [35] Preparation and oxidation characteristics of Si layers grown on 4H-SiC substrates
    Li, Yunkai
    Zhao, Siqi
    Wei, Moyu
    Jiao, Jingyi
    Yan, Guoguo
    Liu, Xingfang
    VACUUM, 2024, 227
  • [36] Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001)
    Velez-Fort, E.
    Ouerghi, A.
    Silly, M. G.
    Eddrief, M.
    Shukla, A.
    Sirtti, F.
    Marangolo, M.
    APPLIED PHYSICS LETTERS, 2014, 104 (09)
  • [37] Doping Dependence of Thermal Oxidation on n-Type 4H-SiC
    Daas, B. K.
    Islam, M. M.
    Chowdhury, Iftekhar A.
    Zhao, Feng
    Sudarshan, T. S.
    Chandrashekhar, M. V. S.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) : 115 - 121
  • [38] Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface
    Yang, Xiaozhe
    Yang, Xu
    Kawai, Kentaro
    Arima, Kenta
    Yamamura, Kazuya
    ELECTROCHEMISTRY COMMUNICATIONS, 2019, 100 : 1 - 5
  • [39] Generation of deep levels near the 4H-SiC surface by thermal oxidation
    Fujii, Haruki
    Kaneko, Mitsuaki
    Kimoto, Tsunenobu
    APPLIED PHYSICS EXPRESS, 2024, 17 (04)
  • [40] Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C
    Thomas, S. M.
    Sharma, Y. K.
    Crouch, M. A.
    Fisher, C. A.
    Perez-Tomas, A.
    Jennings, M. R.
    Mawby, P. A.
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2014, 2 (05): : 114 - 117
12345